for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 114 linear & power amplifiers - smt hmc450qs16g / 450qs16ge gaas ingap hbt mmic power amplifier, 0.8 - 1.0 ghz v02.0406 general description features functional diagram the hmc450qs16g & hmc450qs16ge are high efficiency gaas ingap hbt medium power mmic ampli ers operating between 800 and 1000 mhz. the ampli er is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band hmc413qs16g 1.6- 2.3 ghz pa. with a minimum of external components, the ampli er provides 26 db of gain, +40 dbm oip3 and +28.5 dbm of saturated power from a +5v supply voltage. the integrated power control (vpd) can be used for full power down or rf output power/current control. the combination of high gain and high output ip3 make the hmc450qs16g & hmc450qs16ge ideal linear drivers for cellular, pcs & 3g applications. gain: 26 db 32% pae @ 28.5 dbm output power +40 dbm output ip3 integrated power control (vpd) included in the hmc-dk002 designers kit electrical speci cations, t a = +25 c, vs = +5v, vpd = +4v [1] typical applications the hmc450qs16g / hmc450qs16ge is ideal for power and driver ampli er applications: ? gsm, gprs, & edge ? cdma & wcdma ? base stations & repeaters parameter min. typ. max. units frequency range 0.8 - 1.0 ghz gain 23 26 db gain variation over temperature 0.015 0.025 db/c input return loss 17 db output return loss 13 db output power for 1 db compression (p1db) 23 26 dbm saturated output power (psat) 28.5 dbm output third order intercept (ip3) [2] 37 40 dbm noise figure 8db supply current (icq) 310 ma control current (ipd) 12 ma switching speed ton, toff 10 ns [1] speci cations and data re ect hmc450qs16g measured using the application circuit found herein. contact the hmc applicatio ns group for assistance in optimizing performance for your application. [2] two-tone output power of +15 dbm per tone, 1 mhz spacing.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 115 input return loss vs. temperature broadband gain & return loss gain vs. temperature output return loss vs. temperature reverse isolation vs. temperature power down isolation vs. temperature -20 -15 -10 -5 0 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c return loss (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c isolation (db) frequency (ghz) -80 -70 -60 -50 -40 -30 -20 -10 0 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c isolation (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 0.6 0.7 0.8 0.9 1 1.1 1.2 s21 s11 s22 response (db) frequency (ghz) 20 22 24 26 28 30 32 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c return loss (db) frequency (ghz) hmc450qs16g / 450qs16ge gaas ingap hbt mmic power amplifier, 0.8 - 1.0 ghz v02.0406
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 116 linear & power amplifiers - smt p1db vs. temperature psat vs. temperature output ip3 vs. temperature noise figure vs. temperature gain, power, oip3 and supply current vs. power down voltage @ 900 mhz 20 21 22 23 24 25 26 27 28 29 30 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 20 21 22 23 24 25 26 27 28 29 30 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c psat (dbm) frequency (ghz) gain and power vs. supply voltage @ 900 mhz, vpd= 4v 30 32 34 36 38 40 42 44 46 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c oip3 (dbm) frequency (ghz) 0 2 4 6 8 10 12 0.7 0.8 0.9 1 1.1 +25 c +85 c -40 c noise figure (db) frequency (ghz) 20 22 24 26 28 30 2.75 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 gain psat p1db gain (db), p1db (dbm), psat (dbm) vcc supply voltage (vdc) 8 12 16 20 24 28 32 36 40 40 80 120 160 200 240 280 320 360 2.8 3 3.2 3.4 3.6 3.8 4 gain psat p1db oip3 icc gain (db), p1db (dbm), psat (dbm), oip3 (dbm) icc (ma) vpd (vdc) hmc450qs16g / 450qs16ge gaas ingap hbt mmic power amplifier, 0.8 - 1.0 ghz v02.0406
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 117 power compression @ 900 mhz acpr vs. supply voltage @ 900 mhz cdma is95, 9 channels forward 0 4 8 12 16 20 24 28 32 36 40 -20 -16 -12 -8 -4 0 4 8 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 8 1012141618202224 acpr (dbc) channel power (dbm) cdma is95 frequency: 900 mhz integration bw: 1.228 mhz forward link, 9 channels 5.5v 4.5v 5v source acpr 1 1.2 1.4 1.6 1.8 2 -20 -15 -10 -5 0 5 10 power dissipation (w) input power (dbm) max pdiss @ +85c power dissipation@ 900 mhz hmc450qs16g / 450qs16ge gaas ingap hbt mmic power amplifier, 0.8 - 1.0 ghz v02.0406
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 118 linear & power amplifiers - smt outline drawing absolute maximum ratings collector bias voltage (vcc) +5.5 vdc control voltage (vpd1, vpd2) +5vdc rf input power (rfin)(vs = +5vdc, vpd = +4.0 vdc) +10 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 28 mw/c above 85 c) 1.86 w thermal resistance (junction to ground paddle) 35 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. vs (v) icq (ma) 4.75 300 5.0 310 5.25 325 typical supply current vs. supply voltage note: ampli er will operate over full voltage range shown above hmc450qs16g / 450qs16ge gaas ingap hbt mmic power amplifier, 0.8 - 1.0 ghz v02.0406 part number package body material lead finish msl rating package marking [3] hmc450qs16g low stress injection molded plastic sn/pb solder msl1 [1] h450 xxxx hmc450qs16ge rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h450 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 119 pin number function description interface schematic 1, 2, 4, 5, 7, 8, 9, 10, 13, 15 gnd ground: backside of package has exposed metal ground slug that must be connected to ground thru a short path. vias under the device are required. 3, 14 vpd1, vpd2 power control pin. for maximum power, this pin should be connected to 4.0v. for 5v operation, a dropping resistor is required. a higher voltage is not recommended. for lower idle current, this voltage can be reduced. 6 rfin this pin is ac coupled and matched to 50 ohms from 0.8 to 1.0 ghz. 11, 12 rfout rf output and bias for the output stage. 16 vcc power supply voltage for the rst ampli er stage. an external bypass capacitor of 330 pf is required as shown in the application schematic. pin descriptions hmc450qs16g / 450qs16ge gaas ingap hbt mmic power amplifier, 0.8 - 1.0 ghz v02.0406
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 120 linear & power amplifiers - smt application circuit tl1 tl2 tl3 tl4 tl5 tl6 impedance 50 ohm 50 ohm 50 ohm 50 ohm 50 ohm 50 ohm physical length 0.08 0.05 0.02 0.02 0.02 0.02 electrical length 4? 2.5? 1.02? 1.02? 1.02? 1.02? pcb material: 10 mil rogers 4350 er = 3.48 recommended component values c1, c2, c7, c8 100 pf c3 1000 pf c4 3.9 pf c5 1.2 pf c6 27 pf c9, c10 2.2 f l1 1.9 nh l2 1.0 nh l3 56 nh r1, r2 50 ohms hmc450qs16g / 450qs16ge gaas ingap hbt mmic power amplifier, 0.8 - 1.0 ghz v02.0406
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 121 evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 108349 [1] item description j1 - j2 pcb mount sma connector j3 2 mm dc header c1, c7, c8 100 pf capacitor, 0402 pkg. c2 100 pf capacitor, 0603 pkg. c3 1000 pf capacitor, 0603 pkg. c4 3.9 pf capacitor, 0402 pkg. c5 1.2 pf capacitor, 0402 pkg. c6 27 pf capacitor, 0402 pkg. c9, c10 2.2 uf capacitor, tantalum l1 1.9 nh inductor 0402 pkg. l2 1.0 nh inductor, 0402 pkg. l3 56nh inductor, 0805 pkg. r1, r2 50 ohms resistor, 0402 pkg. u1 hmc450qs16g / hmc450qs16ge power amp. pcb [2] 108191 evaluation pcb, 10 mils [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc450qs16g / 450qs16ge gaas ingap hbt mmic power amplifier, 0.8 - 1.0 ghz v02.0406
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